Optimization of Al/a-SiC:H optical sensor device by means of thermal annealing

Microelectronics Journal

Volumn 38, Issue 12, 2007, Pages 1196-1201

  Magafas, L ^a   Kalomiros, J ^b  

^a TECHNOLOGICAL EDUCATIONAL INSTITUTE OF KAVALA   (Greece)

^b TECHNOLOGICAL EDUCATIONAL INSTITUTE OF SERRES   (Greece)

Author keywords

Optical sensor; Schottky diode; Thermal annealing

Indexed keywords

ANNEALING; OPTOELECTRONIC DEVICES; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

MINORITY CARRIERS; OPTIMUM MATERIAL QUALITY;

OPTICAL SENSORS;

EID: 36448961626     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.09.016     Document Type: Article

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