Thermal annealing effects on the optical and electrical properties of a-SiC:H thin films sputtered at different hydrogen flow rates

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 7, 2007, Pages 2030-2035

  Magafas, L ^a   Mertzanidis, C ^a   Bandekas, D ^a   Athanasiades, N ^b  

^a TECHNOLOGICAL EDUCATIONAL INSTITUTE OF KAVALA   (Greece)

^b Operations Department   (Greece)

Author keywords

Amorphous semiconductor; Electrical properties; Optical properties; Thermal annealing

Indexed keywords

AMORPHOUS SEMICONDUCTORS; ANNEALING; DETERIORATION; ELECTRIC PROPERTIES; ENERGY GAP; FLOW RATE; HYDROGEN; HYDROGEN BONDS; LIGHT TRANSMISSION; OPTICAL PROPERTIES; SILICON CARBIDE; THIN FILM SOLAR CELLS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS;

AMORPHOUS NETWORKS; EFFECT OF ANNEALING; ELECTRICAL MEASUREMENT; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL SENSOR DEVICES; OPTICAL TRANSMISSION MEASUREMENTS; THERMAL ANNEALING EFFECTS; THERMAL-ANNEALING;

AMORPHOUS SILICON;

EID: 36448973442     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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