Optimization of the electrical properties of Al/a-SiC:H Schottky diodes by means of thermal annealing of a-SiC:H thin films

Microelectronics Journal

Volumn 37, Issue 11, 2006, Pages 1352-1357

  Magafas, L ^a   Kalomiros, J ^b   Bandekas, D ^a   Tsirigotis, G ^a  

^a TECHNOLOGICAL EDUCATIONAL INSTITUTE OF KAVALA   (Greece)

^b TECHNOLOGICAL EDUCATIONAL INSTITUTE OF SERRES   (Greece)

Author keywords

Electrical properies; Schottky diodes; Thermal annealing

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; HYDROGEN BONDS; RELAXATION PROCESSES; THERMAL EFFECTS; THIN FILMS;

AMORPHOUS NETWORK; TEMPERATURE COEFFICIENT; THERMAL ANNEALING;

SCHOTTKY BARRIER DIODES;

EID: 33751080142     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.07.002     Document Type: Article

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