Optical response study of the Al/a-SiC:H Schottky diode for different substrate temperatures of the r.f. sputtered a-SiC:H thin film

Active and Passive Electronic Components

Volumn 26, Issue 2, 2003, Pages 63-70

  Magafas, L ^a  

^a DEMOCRITUS UNIVERSITY OF THRACE   (Greece)

Author keywords

Diffusion length; Heterojunction; Optical sensor; Schottky diode

Indexed keywords

HETEROJUNCTIONS; OPTICAL SENSORS; OPTICAL VARIABLES MEASUREMENT; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS; SPUTTERING; SUBSTRATES; TEMPERATURE MEASUREMENT; THIN FILMS; VOLTAGE MEASUREMENT;

DIFFUSION LENGTH; OPTICAL RESPONSE; REVERSE BIAS VOLTAGE; SUBSTRATE TEMPERATURE; WIDEBAND OPTICAL SENSOR;

SCHOTTKY BARRIER DIODES;

EID: 0038819565     PISSN: 08827516     EISSN: None     Source Type: Journal    
DOI: 10.1080/0882751021000010627     Document Type: Article

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