The use of electron backscatter diffraction to measure the elastic strain fields in a misfit dislocation-free InGaAsP/InP heterostructure

Journal of Physics D: Applied Physics

Volumn 40, Issue 23, 2007, Pages 7302-7305

  Fan, L X ^a   Guo, D L ^a   Ren, F ^a   Xiao, X H ^a   Cai, G X ^a   Fu, Q ^a   Jiang, C Z ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION; ELECTROMAGNETIC WAVE BACKSCATTERING; EPILAYERS; IMAGE QUALITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

ELASTIC STRAIN FIELDS; ELECTRON BACKSCATTER DIFFRACTION; HIGH RESOLUTION TRANSMISSION MICROSCOPY;

HETEROJUNCTIONS;

EID: 36348955524     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/23/008     Document Type: Article

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