Characterisation of the LPE grown InGaAsP/InP hetero-structures: IR-LED at 1.66 μm used for the remote monitoring of methane gas

Journal of Crystal Growth

Volumn 173, Issue 3-4, 1997, Pages 285-296

  Volkov, V V ^a,b   Van Landuyt, J ^a,b   Marushkin, K M ^a,b   Gijbels, R ^a   Ferauge C ^a   Vasilyev, M G ^b   Shelyakin, A A ^b   Sokolovsky, A A ^c  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b KURNAKOV INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Russian Federation)

^c Institute of Radioelectronics   (Russian Federation)

Author keywords

Crystal growth; Electron microscopy; Gas sensors; InGaAsP heterostructures; IR light emitting diodes; Phase separation

Indexed keywords

CHEMICAL SENSORS; CRYSTAL LATTICES; DECOMPOSITION; HETEROJUNCTIONS; INDIUM ALLOYS; LIQUID PHASE EPITAXY; METHANE; PHASE SEPARATION; REMOTE CONTROL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

LATTICE MATCHING; SPINODAL DECOMPOSITION;

LIGHT EMITTING DIODES;

EID: 0031118992     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01068-8     Document Type: Article

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