Use of electron back-scattered diffraction to study the regrowth of amorphized silicon-based heterostructures

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 121-123

  Vernon Parry, K D ^a   Abd El Rahman, K F ^a   Brough, I ^c   Evans Freeman, J H ^a   Zhang, J ^b   Peaker, A R ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; BACKSCATTERING; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; REACTION KINETICS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY (XTEM); ELECTRON BACKSCATTERED DIFFRACTION (EBSD);

HETEROJUNCTIONS;

EID: 0035247275     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00099-8     Document Type: Article

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