Electron and lattice structure of ultra thin Ag films on Si(1 1 1) and Si(0 0 1)

Surface Science

Volumn 601, Issue 23, 2007, Pages 5403-5411

  Gasparov, V A ^a   Riehl Chudoba, M ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

Low energy electron diffraction (LEED); Scanning tunneling microscopy; Scanning tunneling spectroscopy; Silicon; Silver; Surface electrical transport (surface conductivity, surface recombination, etc.); Surface relaxation and reconstruction; Visible and ultraviolet photoelectron spectroscopy

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; LATTICE CONSTANTS; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SILICON; THIN FILMS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SCANNING TUNNELING SPECTROSCOPY (STS); SURFACE CONDUCTIVITY; SURFACE ELECTRICAL TRANSPORT; SURFACE RECOMBINATION; SURFACE RELAXATION AND RECONSTRUCTION;

SILVER ALLOYS;

EID: 36248986738     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.09.020     Document Type: Article

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