Correlation between morphological transition and preferred thickness of Pb and Ag islands on Si(111)7 X 7

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 7, 2005, Pages

  Su, W B ^a   Lin, H Y ^a,b   Chiu, Y P ^a,c   Shih, H T ^a   Fu, T Y ^c   Chen, Y W ^b   Chang, C S ^a   Tsong, Tien T ^a  

^a INSTITUTE OF PHYSICS   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LEAD; SILICON; SILVER;

ARTICLE; PHASE TRANSITION; QUANTUM MECHANICS; SCANNING TUNNELING MICROSCOPY; STRUCTURE ANALYSIS; TEMPERATURE; THICKNESS;

EID: 15744403438     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.073304     Document Type: Article

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