Transition from 2D to 3D growth during Ag/Si(111)-(7 × 7) heteroepitaxy

Surface Science

Volumn 482-485, Issue PART 2, 2001, Pages 797-801

  Sobotík, Pavel ^a   Ošt'ádal, Ivan ^a   Mysliveček, Josef ^a   Jarolímek, Tomáš ^a   Lavický, František ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

Author keywords

Epitaxy; Growth; Metal semiconductor interfaces; Silicon; Silver; Surface structure, morphology, roughness, and topography

Indexed keywords

EID: 0009621756     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)01085-2     Document Type: Article

References (12)

1. E.J. van Loenen, M. Iwami, R.M. Tromp, J.F. van der Veen, Surf. Sci. 137 (1984) 1.
2. A. Shibata, Y. Kimura, K. Takayanagi, Surf. Sci. 303 (1994) 161.
3. St. Tosch, H. Neddermeyer, Phys. Rev. Lett. 61 (1988) 349.
4. St. Tosch, H. Neddermeyer, J. Microsc. 152 (1988) 415.
5. M. Hanbücken, M. Futamoto, J.A. Venables, Surf. Sci. 147 (1984) 4330.
6. M. Hanbücken, I. Vianey, F. Palmino, D. Pailharey, Microsc. Microanal. Microstruct. 5 (1994) 41.
7. L. Gavioli, K.R. Kimberlin, M.C. Tringides, J.F. Wendelken, Z. Zhang, Phys. Rev. Lett. 82 (1999) 129.
8. I. Ošt'ádal, P. Sobotík, J. Mysliveček, T. Jarolímek, Czech. J. Phys. 49 (1999) 1613.
9. G. Meyer, K.H. Rieder, Appl. Phys. Lett. 64 (1994) 3560.
10. P. Sobotík, I. Ošt'ádal, J. Mysliveček, T. Jarolímek, Surf. Sci. 454-456 (2000) 847.
11. V.A. Shchukin, D. Bimberg, Rev. Mod. Phys. 71 (1999) 1125.
12. J. Tersoff, R.M. Tromp, Phys. Rev. Lett. 70 (1993) 2782.