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Volumn 493, Issue 1-3, 2001, Pages 389-398

Growth mode and electrical conductance of Ag atomic layers on Si(0 0 1) surface

(4) Tanikawa, Takehiro a Matsuda, Iwao a Nagao, Tadaaki a,b Hasegawa, Shuji a,b

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

Conductivity; Electrical transport measurements; Epitaxy; Growth; Reflection high energy electron diffraction (RHEED); Silicon; Silver; Synchrotron radiation photoelectron spectroscopy; Wetting

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SILVER; SYNCHROTRON RADIATION; ULTRAVIOLET RADIATION; WETTING;

ELECTRICAL TRANSPORT MEASUREMENTS;

SEMICONDUCTING SILICON;

EID: 0035500868 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01244-4 Document Type: Conference Paper

Times cited : (11)

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