The impact of gate-oxide breakdown on common-source amplifiers with diode-connected active load in low-voltage CMOS processes

IEEE Transactions on Electron Devices

Volumn 54, Issue 11, 2007, Pages 2860-2870

  Chen, Jun Sheng ^a   Ker, Ming Dou ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Analog integrated circuit; Common source amplifier; Dielectric breakdown; Gate oxide reliability; Hard breakdown; Soft breakdown

Indexed keywords

AMPLIFIERS (ELECTRONIC); ANALOG CIRCUITS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); INTEGRATED CIRCUITS;

ANALOG INTEGRATED CIRCUIT; COMMON-SOURCE AMPLIFIERS; GATE-OXIDE BREAKDOWN; GATE-OXIDE RELIABILITY;

CMOS INTEGRATED CIRCUITS;

EID: 36248973659     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.906938     Document Type: Article

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