Properties of HfTaxOy high-k layers deposited by ALCVD

Proceedings - Electrochemical Society

Volumn PV 2005-05, Issue , 2005, Pages 133-140

  Zhao, C ^a   Rittersma, Z M ^b   Van Berkum, J G M ^b   Snijders, J H M ^b   Hendriks, A ^b   Breimer, P ^b   Great, P ^b   Maes, J W ^c   Witters, H ^c   Afanas'ev, V V ^d   Tois, E ^e   Tuominen, M ^e   Caymax, M ^a   De Gendt, S ^a   Heyns, M ^a  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c ASM BELGIUM   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e ASM Microchemistry Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; RAPID THERMAL ANNEALING; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

RAPID THERMAL PROCESSING (RTP); SPECTROSCOPIC ELLIPSOMETRY (SE);

HAFNIUM COMPOUNDS;

EID: 31844445013     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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