Hot-carrier effects in strained n-channel transistor with silicon-carbon (Si1-yCy) source/drain stressors and its orientation dependence

IEEE Electron Device Letters

Volumn 28, Issue 11, 2007, Pages 996-999

  Ang, Kah Wee ^a   Wan, Chunlei ^a   Balasubramanian, Narayanan ^b   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Channel orientation; Hot carrier effects; Silicon carbon(Si1 yCy); Strain

Indexed keywords

ENERGY GAP; HOT CARRIERS; IMPACT IONIZATION; STRAIN; THRESHOLD VOLTAGE;

CHANNEL ORIENTATION; INTERFACE STATE GENERATION; SUBTHRESHOLD SWING;

FIELD EFFECT TRANSISTORS;

EID: 36148946462     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.906933     Document Type: Article

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