Electron heating in Al0.15Ga0.85N/GaN heterostructures grown on p-type Si

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 2, 2007, Pages 343-346

  Lin, Li Hung ^a   Chen, Kui Ming ^a   Han, Shiou Shian ^a   Liang, C T ^b   Hsueh, Wen Chang ^b   Yao Chen, Kuang ^b   Sun, Zhi Hao ^b   Chang, P H ^c   Chen, N C ^c   Chang, Chin An ^c  

^a NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Current scaling; Electron heating; GaN; Si; Two dimensional electron system

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; SILICON;

CURRENT SCALING; ELECTRON HEATING; TWO-DIMENSIONAL ELECTRON SYSTEMS;

HETEROJUNCTIONS;

EID: 36148929797     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.06.029     Document Type: Article

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