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Volumn 40, Issue 2, 2007, Pages 335-338
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Layer-thickness dependence in tunneling magnetoresistance and current-driven magnetization reversal using GaMnAs-based double-barrier structures
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Author keywords
Current driven magnetization reversal; Magnetic semiconductor; Tunneling magnetoresistance
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Indexed keywords
COERCIVE FORCE;
CURRENT DENSITY;
MAGNETIC SEMICONDUCTORS;
MAGNETIZATION;
SPIN ACCUMULATION;
SPIN CONFIGURATIONS;
TUNNELING MAGNETORESISTANCE;
ELECTRON TUNNELING;
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EID: 36049026486
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2007.06.063 Document Type: Article |
Times cited : (2)
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References (15)
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