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Volumn 40, Issue 2, 2007, Pages 335-338

Layer-thickness dependence in tunneling magnetoresistance and current-driven magnetization reversal using GaMnAs-based double-barrier structures

Author keywords

Current driven magnetization reversal; Magnetic semiconductor; Tunneling magnetoresistance

Indexed keywords

COERCIVE FORCE; CURRENT DENSITY; MAGNETIC SEMICONDUCTORS; MAGNETIZATION;

EID: 36049026486     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.06.063     Document Type: Article
Times cited : (2)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.