Characteristics of GaMnAs-based double-barrier TMR structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue 12, 2006, Pages 4180-4183

  Watanabe, M ^a   Toyao, H ^a   Okabayashi, J ^a   Yoshino, J ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-DRIVEN; DOUBLE BARRIERS; INTERNATIONAL CONFERENCES; LAYER THICKNESSES; LOW THRESHOLD CURRENT DENSITY; MAGNETIC LAYERS; MAGNETIC ORIENTATION; MAGNETIC TUNNELING JUNCTIONS; MINOR LOOP; TUNNELING MAGNETORESISTANCE; UNIAXIAL MAGNETIC ANISOTROPY;

CRYSTALLOGRAPHY; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; EXCAVATION; GALLIUM ALLOYS; MAGNETIC ANISOTROPY; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETORESISTANCE; SEMICONDUCTOR MATERIALS; SPIN DYNAMICS; TUNNELING (EXCAVATION);

THRESHOLD CURRENT DENSITY;

EID: 36048930655     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200672868     Document Type: Conference Paper

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