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Volumn 19, Issue 22, 2007, Pages 5230-5237

Development of N-alkyl-substituted bis(pyrrolo[3,4-d])tetrathiafulvalenes as organic semiconductors for solution-processible field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

DERIVATIVES; FIELD EFFECT TRANSISTORS; HYDROPHOBICITY; SINGLE CRYSTALS; SUBSTITUTION REACTIONS; TWO DIMENSIONAL;

EID: 36049016081     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm070956+     Document Type: Article
Times cited : (37)

References (65)
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    • Recently, a special issue on organic electronics was published: Jenekhe, S. A. Chem. Mater. 2004, 16, 4381-4846.
  • 3
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    • (b) Katz, H. E. Chem. Mater. 2004, 16, 4748-4756.
    • (2004) Chem. Mater , vol.16 , pp. 4748-4756
    • Katz, H.E.1
  • 37
    • 0842284130 scopus 로고    scopus 로고
    • A recent review on TTF materials: Otsubo, T.; Takimiya, K. Bull. Chem. Soc. Jpn. 2004, 77, 43-58.
    • A recent review on TTF materials: Otsubo, T.; Takimiya, K. Bull. Chem. Soc. Jpn. 2004, 77, 43-58.
  • 47
    • 33750298238 scopus 로고    scopus 로고
    • Recently, solution-processed OFETs using zone-casting or spin-coating methods based on tetrakis(alkylthio)-TTF and -bisTTFs were reported: (a) Miskiewicz, P.; Mas-Torrent, M.; Jung, J.; Kotarba, S.; Glowacki, I.; Gomar-Nadal, E.; Amabilino, D. B.; Veciana, J.; Krause, B.; Carbone, D.; Rovira, C.; Ulanski, J. Chem. Mater. 2006, 18, 4724-4729.
    • Recently, solution-processed OFETs using zone-casting or spin-coating methods based on tetrakis(alkylthio)-TTF and -bisTTFs were reported: (a) Miskiewicz, P.; Mas-Torrent, M.; Jung, J.; Kotarba, S.; Glowacki, I.; Gomar-Nadal, E.; Amabilino, D. B.; Veciana, J.; Krause, B.; Carbone, D.; Rovira, C.; Ulanski, J. Chem. Mater. 2006, 18, 4724-4729.
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    • SIR-92: Altomare, A.; Cascarano, G.; Giacovazzo, C.; Gugliardi, A.; Burla, M. C.; Polidori, G.; Camalli, M. J. Appl. Crystallogr. 1994, 27, 435-436.
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    • The devices were degraded gradually under ambient conditions, probably owing to the low oxidation potentials (i.e., high HOMO levels) of 3-7. See Supporting Information.
    • The devices were degraded gradually under ambient conditions, probably owing to the low oxidation potentials (i.e., high HOMO levels) of 3-7. See Supporting Information.
  • 58
    • 36048983428 scopus 로고    scopus 로고
    • Poor FET characteristics can be ascribed to the less-ordered molecular array in the evaporated thin film of 2. See Supporting Information
    • Poor FET characteristics can be ascribed to the less-ordered molecular array in the evaporated thin film of 2. See Supporting Information.
  • 59
    • 36048943315 scopus 로고    scopus 로고
    • FET characteristics of P3HT-based devices similarly fabricated are available in the Supporting Information.
    • FET characteristics of P3HT-based devices similarly fabricated are available in the Supporting Information.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.