Nondestructive electrical characterization of integrated interconnect line-to-line spacing for advanced semiconductor chips

Applied Physics Letters

Volumn 91, Issue 19, 2007, Pages

  Chen, Fen ^a   McLaughlin, Paul S ^b   Chanda, Kaushik ^b  

^a IBM   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; NONDESTRUCTIVE EXAMINATION; RELIABILITY ANALYSIS; SEMICONDUCTOR DEVICES; SILICON WAFERS;

CONSTRUCTIONAL ANALYSIS DATA; DIELECTRIC BREAKDOWN RELIABILITY; LINE SPACING VARIATION; SEMICONDUCTOR CHIPS;

MICROPROCESSOR CHIPS;

EID: 36049015450     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2806916     Document Type: Article

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