Analysis of leakage mechanisms and leakage pathways in intra-level Cu interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 571-572

  Ngwan, V C ^a   Zhu, Chunxiang ^a   Krishnamoorthy, Ahila ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Interconnects; Low k and Copper

Indexed keywords

OPTICAL INTERCONNECTS;

BARRIER LAYERS; CARRIER TRANSPORT MODEL; CU-INTERCONNECTS; LEAKAGE BEHAVIORS; LEAKAGE MECHANISM; POOLE-FRENKEL; SCHOTTKY;

RELIABILITY;

EID: 28744437908     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315394     Document Type: Conference Paper

References (10)

1. E. T. Ogawa et al., Proc. of 41st IEEE IRPS, p. 166 (2003)
2. R. Tsu et al., Proc. of 39th IEEE IRPS, p. 348 (2000)
3. G. Bersuker et al., Proc. of 38th IEEE IRPS, p. 344 (2000)
4. P.-T. Liu et al., J. Electrochem. Soc., 150, F7-F10 (2003)
5. W. S. Song et al., Proc. of 40th IEEE IRPS, p. 305 (2002)
6. S. U. Kimet al., Proc. of 37th IEEE IRPS, p. 277 (1999)
7. J. Noguchi et al., Proc. of 38th IEEE IRPS, p. 339 (2000)
8. S. M. Sze, Phys. of Semicon. Devices, Wiley, p. 403
9. W. R. Harretl et al., Thin Solid Films, 352, 195 (1999)
10. S. Habermehl et al., Appl. Phys. Lett., 80, 261 (2002)