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Volumn 52, Issue 18, 1988, Pages 1514-1516

Effect of bias on the response of metal-oxide-semiconductor devices to low-energy x-ray and cobalt-60 irradiation

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001649726     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.99116     Document Type: Article
Times cited : (29)

References (27)
  • 24
    • 84950785930 scopus 로고    scopus 로고
    • For irradiations at fields above 1 MV/cm, [formula omitted] was proportional to [formula omitted] At lower fields, the dependence of [formula omitted] on dose decreased somewhat. For the thinner oxides at the lowest fields, [formula omitted] was proportional to [formula omitted] For the thicker oxides [formula omitted] was proportional to [formula omitted] at the lowest fields.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.