Bias and frequency dependence of radiation-induced charge trapping in MOS devices

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2114-2120

  Felix, J A ^a,b   Fleetwood, D M ^a,b   Riewe, L C ^c   Shaneyfelt, M R ^a,c   Winokur, P S ^a,c  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Electron traps; Hole traps; Modeling; Radiation effects; Thermally stimulated currents

Indexed keywords

THERMALLY STIMULATED CURRENTS (TSC);

CAPACITANCE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; HOLE TRAPS; IRRADIATION; MATHEMATICAL MODELS; RADIATION EFFECTS;

MOS DEVICES;

EID: 0035721847     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983181     Document Type: Conference Paper

References (30)

1. A complete radiation-reliability software simulator
2. TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs
3. The effects of test conditions on MOS radiation-hardness results
4. The effect of operating frequency in the radiation induced buildup of trapped holes and interface states
5. Predicting switched-bias response from steady-state irradiations
6. Radiation-induced charge neutralization and interface-trap buildup in MOS devices
7. The role of electron transport and trapping in MOS total-dose modeling
8. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates
9. Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides
10. MOS hardening approaches for low-temperature applications
11. Proton energy dependence of radiation effects in MOS structures
12. Effect of photon energy on the response of MOS devices
13. Comparison of Co-60 response and 10 keV x-ray response in MOS capacitors
14. Charge yield for 10-keV X-ray and Cobalt-60 irradiation of MOS devices
15. 2
16. New insights into radiation-induced oxide-trap charge through thermally stimulated-current measurement and analysis
17. 2O-nitrided oxides
18. Correlating the radiation response of MOS capacitors and transistors
19. 2 structure
20. Border traps in MOS devices
21. The nature of the trapped hole annealing process
22. 2
23. Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge
24. Charge yield and dose effects in MOS capacitors at 80 K
25. 2
26. The relationship between Co-60 and 10 keV x ray damage in MOS devices
27. Revised model of thermally stimulated current in MOS capacitors
28. Bulk oxide traps and border traps in MOS capacitors
29. Two-stage process for buildup of radiation-induced interface states
30. + process