Thermal stress of 140 nm-width Cu damascene interconnects

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 136-138

  Okada, N ^a   Matsubara, Y ^a   Kimura, H ^a   Aizawa, H ^a   Nakamura, N ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; FAILURE ANALYSIS; METALS;

CU DAMASCENE INTERCONNECTS; CU-INTERCONNECTS; STRUCTURE CHANGE; THERMAL PROCESS; THREEDIMENSIONAL (3-D); TWO DIMENSIONAL (2 D);

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84961732874     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014912     Document Type: Conference Paper

References (5)

1. K.Musaka, et al., "Thermal Stress and Reliability Characterization of Barriers for Cu Interconnects" in the 2001 IEEE International Interconnect Technology Conference (IITC)
2. T.Oshima, et al., "Improvement of thermal stability of via resistance in dual damascene copper interconnection" in Technical Digest of 2000 International Electron Device Meeting (IEDM)
3. M.Tagami, et al., "A New Failure Observation in 0.10-μm-Wide Cu Lines Using Optical Beam Induced Resistance Changes (OBIRCH) Method" in the 2001 IEEE International Interconnect Technology Conference (IITC)
4. T.Liu, et al., "An XAFS measurement of copper thin film by a simple detector in total-electron-yield mode" in Nuclear Instruments and Methods in Physics Research B (NIM-B), p301-306 (2000).
5. S.Riedel, et al., "Stress in copper films for interconnects" in 1997 Materials for Advanced Metallization (MAM'97), p.148-149