New insight into stress induced voiding mechanism in Cu interconnects

Proceedings of the IEEE 2005 International Interconnect Technology Conference, IITC

Volumn , Issue , 2005, Pages 108-110

  Lee, Sun Jung ^a   Lee, Soo Geun ^a   Suh, Bong Suk ^a   Shin, Hongjae ^a   Lee, Nae In ^a   Kang, Ho Kyu ^a   Suh, Gwangpyuk ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES; GRAIN BOUNDARIES; LARGE SCALE SYSTEMS; RELIABILITY;

COPPER LAYER; DIELECTRIC BARRIER DEPOSITION; STRESS INDUCED VOID;

COPPER;

EID: 28244438405     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. T. Oshima, K. Hinode, H. Yamaguchi et al, "Suppression of stress-Induced Voiding in Copper Interconnects", IEDM, 2002, pp 757-760
2. E.T. Ogawa, J.W. McPherson, J.A. Rosal et al, "Stress-Induced Voiding Under Vias Connected to Wide Cu Metal Leads", IRPS, 2002, pp 312-321
3. C. J. Zhai, H.W. Yao, A. Marathe et al., "Stress Modeling of Cu/Low-k BEOL-Application to Stress Migration", IRPS 2004, pp 234-238
4. D.A. Porter, K.E. Easterling, "Phase Transformation in Metals in Alloys", Van Nostrand Reinhold Co. Ltd, pp265-290