Electrical properties of oxide heteroepitaxial p-n junctions: La 1-xSrxFeO3/SrTi0.99Nb 0.01O3

Applied Physics Letters

Volumn 90, Issue 11, 2007, Pages

  Yamamoto, A ^a   Sawa, A ^b   Akoh, H ^b   Kawasaki, M ^c   Tokura, Y ^d  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; HYSTERESIS; LANTHANUM COMPOUNDS; SEMICONDUCTOR DOPING;

BAND SEMICONDUCTORS; OXIDE HETEROEPITAXIALS; SWITCHING DEVICES;

SEMICONDUCTOR JUNCTIONS;

EID: 33947330759     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2712803     Document Type: Article

References (19)

1. C. H. Ahn, J.-M. Triscone, and J. Mannhart, Nature (London) 424, 1015 (2003).
2. A. Baikalov, Y. Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y. Y. Sun, Y. Y. Xue, and C. W. Chu, Appl. Phys. Lett. 83, 957 (2003).
3. A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 85, 4073 (2004).
4. T. Fuji, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura, Appl. Phys. Lett. 86, 012107 (2005).
5. S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. 76, 2749 (2000).
6. A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000).
7. K. Szot, W. Speier, G. Bihlmayer, and R. Waser, Nat. Mater. 5, 312 (2006).
8. H. Tanaka, J. Zhang, and T. Kawai, Phys. Rev. Lett. 88, 027204 (2002).
9. N. Nakagawa, M. Asai, Y. Mukunoki, T. Susaki, and H. Y. Hwang, Appl. Phys. Lett. 86, 082504 (2005).
10. T. Muramatsu, Y. Muraoka, and Z. Hiroi, Jpn. J. Appl. Phys., Part 1 44, 7367 (2005).
11. T. Arima, Y. Tokura, and J. B. Torrance, Phys. Rev. B 48, 17006 (1993).
12. J. Matsuno, T. Mizokawa, A. Fujimori, K. Mamiya, Y. Takeda, S. Kawasaki, and M. Takano, Phys. Rev. B 60, 4605 (1999).
13. H. Wadati, D. Kobayashi, H. Kumigashira, K. Okazaki, T. Mizokawa, A. Fujimori, K. Horiba, M. Oshima, N. Hamada, M. Lippmaa, M. Kawasaki, and H. Koinuma, Phys. Rev. B 71, 035108 (2005).
14. G. Chern, W. K. Hsieh, M. F. Tai, and K. S. Hsung, Phys. Rev. B 58, 1252 (1998).
15. T. Yamamoto, S. Suzuki, H. Suzuki, K. Kawaguchi, K. Takahashi, and Y. Yoshisato, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.36.L390 36, L390 (1997); T. Yamamoto, S. Suzuki, K. Kawaguchi, and K. Takahashi, Jpn. J. Appl. Phys., Part 1 37, 4737 (1998).
16. T. Yamamoto, S. Suzuki, H. Suzuki, K. Kawaguchi, K. Takahashi, and Y. Yoshisato, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.36.L390 36, L390 (1997); T. Yamamoto, S. Suzuki, K. Kawaguchi, and K. Takahashi, Jpn. J. Appl. Phys., Part 1 37, 4737 (1998).
17. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
18. A. Georges, G. Kotliar, W. Krauth, and M. J. Rozenberg, Rev. Mod. Phys. 68, 13 (1996).
19. A. Fujimori, A. Ino, J. Matsuno, T. Yoshida, K. Tanaka, and T. Mizokawa, J. Electron Spectrosc. Relat. Phenom. 124, 127 (2002).