Relaxation and leakage current characteristics of Pb1-xLax(ZryTi1-y) 1-x/4O3 thin films with various Ir-based top electrodes

Journal of Applied Physics

Volumn 88, Issue 11, 2000, Pages 6690-6695

  Yoon, Soon Gil ^a,b   Kingon, A I ^a   Kim, Seung Hyun ^c  

^a North Carolina State University   (United States)

^b Chungnam National University   (South Korea)

^c INOSTEK Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010273682     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1325382     Document Type: Article

References (30)

1. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Appl. Phys. Lett. 65, 1522 (1994).
2. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Jpn. J. Appl. Phys., Part 1 34, 5184 (1995).
3. M. Shimizu, H. Okino, H. Fujisawa, and T. Shiosaki, ISAF Proc. IEEE Int. Symp. Appl. Ferroelectr. 10, 471 (1996).
4. K. Hong, I. K. You, Y. S. Yu, and S. K. Lee, Integr. Ferroelectr. 21, 511 (1998).
5. H. N. Al-Shareef, O. Auciello, and A. I. Kingon, J. Appl. Phys. 77, 2146 (1995).
6. J. Lee, A. Safari, and R. L. Pfeffer, Appl. Phys. Lett. 61, 1643 (1992).
7. J. T. Cheung, P. E. D. Morgan, and R. Neurgaonkar, Proceedings of the Fourth International Symposium on Integrated Ferroelectrics, Colorado Springs, 1992, p. 518.
8. H. N. Al-Shareef, A. I. Kingon, X. Chen, K. R. Bellur, and O. Auciello, J. Mater. Res. 9, 2968 (1994).
9. S. H. Kim, J. G. Hong, S. K. Streiffer, and A. I. Kingon, J. Mater. Res. 14, 1018 (1999).
10. D. R. Wolters and J. J. Van Der School, J. Appl. Phys. 58, 831 (1985).
11. R. Waser and M. Klee, Integr. Ferroelectr. 2, 257 (1992).
12. A. K. Jonscher, Dielectric Relaxation in Solids (Chelsea Dielectrics, London, 1983).
13. X. Chen, A. I. Kingon, H. Al-Shareef, and K. R. Bellur, Ferroelectrics 151, 133 (1994).
14. R. Waser, Integr. Ferroelectr. 15, 39 (1997).
15. J. F. Scott, B. M. Melnick, C. A. Araujo, L. D. McMillan, and R. Zuleeg, in Proceedings of the Third International Symposium on Integrated Ferroelectrics, 1991, p. 176.
16. R. Moazzami, C. Hu, and W. Shepherd, Proceedings International Reliability Physics Symposium, 1990, p. 231.
17. J. F. Scott, B. M. Melnick, J. D. Cuchiaro, R. Zuleeg, C. A. Araujo, L. D. McMillan, and M. C. Scott, Integr. Ferroelectr. 4, 85 (1994).
18. T. Mihara and H. Watanabe, Jpn. J. Appl. Phys., Part I 34, 5664 (1995).
19. H. Hu and S. B. Krupanidhi, J. Mater. Res. 9, 1484 (1994).
20. P. W. Blom, R. M. Wolf, J. F. M. Cillessen, and M. P. C. M. Krijn, Phys. Rev. Lett. 73, 2107 (1994).
21. I. Stolichnov and A. Tagantsev, J. Appl. Phys. 84, 3216 (1998).
22. S. H. Kim, D. J. Kim, J. G. Hong, S. K. Streiffer, and A. I. Kingon, J. Mater. Res. 14, 1371 (1999).
23. J. F. Chang and S. B. Desu, J. Mater. Res. 9, 955 (1994).
24. R. D. Shannon and C. T. Prewitt, Acta Crystallogr. 25, 925 (1969).
25. R. Waser, NATO ASI Series, edited by O. Auciello and R. Waser (Kluwer, Dordrecht, 1995), Vol. 284, p. 223.
26. A. Mansingh and A. Dhar, J. Phys. D 18, 2059 (1985).
27. M. Pollak and T. H. Geballe, Phys. Rev. 122, 1742 (1961).
28. G. E. Pike, Phys. Rev. B 6, 1572 (1972).
29. D. J. Wouters, G. J. Willems, and H. E. Maes, Microelectron. Eng. 29, 249 (1995).
30. J. Robertson, W. L. Warren, B. A. Tuttle, D. Dimos, and D. M. Smyth, Appl. Phys. Lett. 63, 1519 (1993).