An enhanced quasi-monolithic integration technology for microwave and millimeter wave applications

IEEE Transactions on Advanced Packaging

Volumn 26, Issue 4, 2003, Pages 402-409

  Joodaki, Mojtaba ^a   Kompa, Günter ^b   Hillmer, Hartmur ^b  

^a Atmel Germany GmbH   (Germany)

^b UNIVERSITY OF KASSEL   (Germany)

Author keywords

MCM D; Quasimonolithic integration technology; RF packaging

Indexed keywords

AMORPHOUS SILICON; ELECTRIC CONDUCTIVITY; HEAT RESISTANCE; MICROSTRIP LINES; MICROWAVE INTEGRATED CIRCUITS; MILLIMETER WAVE DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES;

HIGH FREQUENCY ACTIVE DEVICE; MILLIMETER WAVE CIRCUIT; QUASIMONOLITHIC INTEGRATION TECHNOLOGY; THERMOMECHANICAL STRESS;

ELECTRONICS PACKAGING;

EID: 0742303706     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2003.821637     Document Type: Article

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