Study of interfaces in GaInSb/InAs quantum wells by high-resolution X-ray diffraction and reciprocal space mapping

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 868-871

  Tomich, D H ^a   Mitchel, W C ^a   Chow, P ^b   Tu, C W ^c  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b SVT ASSOCIATES   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; DEPOSITION; HETEROJUNCTIONS; INTERFACES (MATERIALS); MONOLAYERS; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

PENDELLOSUNG FRINGES; RECIPROCAL SPACE MAPPING;

MOLECULAR BEAM EPITAXY;

EID: 0032688647     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01477-8     Document Type: Article

References (4)

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3. Fewster P.F., Andrew N.L. J. Phys. D. 28:1995;A97.
4. Bocchi C., Ferrari C. J. Phys. D. 28:1995;A164.