Transient and end silicide phase formation in thin film Ni/polycrystalline-Si reactions for fully silicided gate applications

Applied Physics Letters

Volumn 91, Issue 17, 2007, Pages

  Kittl, J A ^a   Pawlak, M A ^a   Torregiani, C ^a   Lauwers, A ^a   Demeurisse, C ^a   Vrancken, C ^a   Absil, P P ^a   Biesemans, S ^a   Coia, C ^b   Detavernier, C ^c   Jordan Sweet, J ^d   Lavoie, C ^d  

^a IMEC   (Belgium)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^c GHENT UNIVERSITY   (Belgium)

^d IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; PHASE BEHAVIOR; POLYCRYSTALLINE MATERIALS; SILICON; X RAY DIFFRACTION;

PHASE FORMATION; SILICIDED GATE APPLICATIONS;

THIN FILMS;

EID: 35548959131     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2799247     Document Type: Article

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