1.54μm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays

Electronics Letters

Volumn 43, Issue 22, 2007, Pages 1198-1199

  Jallipalli, A ^a   Kutty, M N ^a   Balakrishnan, G ^a   Tatebayashi, J ^a   Nuntawong, N ^a   Huang, S H ^a   Dawson, L R ^a   Huffaker, D L ^a   Mi, Z ^b   Bhattacharya, P ^b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DISLOCATIONS (CRYSTALS); LATTICE MISMATCH; LEAKAGE CURRENTS; NUCLEATION; SEMICONDUCTOR LASERS;

ANTI PHASE DOMAIN SUPPRESSION; INTERFACIAL MISFIT DISLOCATIONS; MONOLITHIC LASERS; NUCLEATION LAYER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 35448982243     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20072441     Document Type: Article

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