-
1
-
-
0034314036
-
Monolithically integrated multichannel SiGe/Si p-i-n-HBT photoreceiver arrays
-
O. Qasaimeh, Z. Ma, P. Bhattacharya, E. T. Croke, "Monolithically integrated multichannel SiGe/Si p-i-n-HBT photoreceiver arrays," J. Lightwave Technol., 18 (11), pp. 1548 (2000).
-
(2000)
J. Lightwave Technol.
, vol.18
, Issue.11
, pp. 1548
-
-
Qasaimeh, O.1
Ma, Z.2
Bhattacharya, P.3
Croke, E.T.4
-
2
-
-
0032075238
-
Fabrication of ultrafast Si based MSM photodetector
-
M. Löken, L. Kappius, S. Manti and C. Buchal, "Fabrication of ultrafast Si based MSM photodetector," Elec. Lett., vol. 24, no. 10, pp. 1027-1028, 1998.
-
(1998)
Elec. Lett.
, vol.24
, Issue.10
, pp. 1027-1028
-
-
Löken, M.1
Kappius, L.2
Manti, S.3
Buchal, C.4
-
3
-
-
0031078109
-
High-efficiency and high-speed silicon metal-semiconductor-metal photodetectors operating in the infrared
-
Erli Chen, Stephen Y. Chou, "High-efficiency and high-speed silicon metal-semiconductor-metal photodetectors operating in the infrared," Appl. Phys. Lett. 70, pp. 753 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 753
-
-
Chen, E.1
Chou, S.Y.2
-
4
-
-
0000062406
-
140-GHz metal-semiconductor-metal photodetectors on silicon-on-insulator substrate with a scaled active layer
-
M. Y. Liu, E. Chen, and S. Y. Chou, "140-GHz metal-semiconductor- metal photodetectors on silicon-on-insulator substrate with a scaled active layer", Appl. Phys. Lett. pp. 887-888 (1994).
-
(1994)
Appl. Phys. Lett.
, pp. 887-888
-
-
Liu, M.Y.1
Chen, E.2
Chou, S.Y.3
-
5
-
-
0030212315
-
Bandwidth enhacement in silicon metal-semiconductor-metal photodetector by trench formation
-
J. Y. L. Ho and K. S. Wong, "Bandwidth enhacement in Silicon Metal-Semiconductor-Metal Photodetector by Trench Formation," IEEE. Photon. Tech. Lett. pp. 1064-1066 (1996).
-
(1996)
IEEE. Photon. Tech. Lett.
, pp. 1064-1066
-
-
Ho, J.Y.L.1
Wong, K.S.2
-
6
-
-
0033327940
-
Resonant-cavity-enhanced high-speed Si photodiode grown by epitaxial lateral overgrowth
-
J. D. Schaub, R. Li, C. L. Schow, J. C. Campbell, G. W. Neudeck and J. Denton, "Resonant-Cavity-Enhanced High-Speed Si Photodiode Grown by Epitaxial Lateral Overgrowth," IEEE Photon. Technol. Lett. pp. 1647-1649 (1999).
-
(1999)
IEEE Photon. Technol. Lett.
, pp. 1647-1649
-
-
Schaub, J.D.1
Li, R.2
Schow, C.L.3
Campbell, J.C.4
Neudeck, G.W.5
Denton, J.6
-
7
-
-
0036538863
-
High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates
-
M. K. Emsley, O. Dosunmu, M. S. Unlu, "High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates," IEEE Photon. Technol. Lett., 14 (4), pp. 519-521 (2002).
-
(2002)
IEEE Photon. Technol. Lett.
, vol.14
, Issue.4
, pp. 519-521
-
-
Emsley, M.K.1
Dosunmu, O.2
Unlu, M.S.3
-
8
-
-
0032206887
-
Spatially modulated light detector in CMOS with sense-amplifier receiver operating at 180 Mb/s for optical data link applications and parallel optical interconnects between chips
-
Kuijk, M.; Coppee, D.; Vounckx, R., "Spatially modulated light detector in CMOS with sense-amplifier receiver operating at 180 Mb/s for optical data link applications and parallel optical interconnects between chips," IEEE J. Sel. Top. in Quant. Electron., 4 (6), pp. 1040-1045, 1998.
-
(1998)
IEEE J. Sel. Top. in Quant. Electron.
, vol.4
, Issue.6
, pp. 1040-1045
-
-
Kuijk, M.1
Coppee, D.2
Vounckx, R.3
-
9
-
-
0032643248
-
1-Gb/s integrated optical detectors and receivers in commercial CMOS technologies
-
T. K. Woodward and A. V. Krishnamoorthy, "1-Gb/s Integrated Optical Detectors and Receivers in Commercial CMOS Technologies," IEEE J. of Sel. Topics in Quantum Electron., vol. 5, no. 2, pp. 146-156, 1999.
-
(1999)
IEEE J. of Sel. Topics in Quantum Electron.
, vol.5
, Issue.2
, pp. 146-156
-
-
Woodward, T.K.1
Krishnamoorthy, A.V.2
-
10
-
-
0030190639
-
A VLSI-compatible high-speed silicon photodetector for optical data links
-
July
-
M. Ghioni, F. Zappa, V. P. Kesan, and J. Warnock, "A VLSI-compatible high-speed silicon photodetector for optical data links," IEEE Trans. Electron Devices, vol. 43, pp. 1054-1060, July 1996.
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, pp. 1054-1060
-
-
Ghioni, M.1
Zappa, F.2
Kesan, V.P.3
Warnock, J.4
-
11
-
-
0036477687
-
CMOS-compatible high-speed planar silicon photodiodes fabricated on SOI substrates
-
February
-
S. M. Csutak, J.D. Schaub, W. E. Wu, R. Shimer, J.C. Campbell, "CMOS-Compatible High-Speed Planar Silicon Photodiodes Fabricated on SOI Substrates," IEEE Journal of Quantum Electronics, v38 n2, February 2002, pp. 193-196.
-
(2002)
IEEE Journal of Quantum Electronics
, vol.38
, Issue.2
, pp. 193-196
-
-
Csutak, S.M.1
Schaub, J.D.2
Wu, W.E.3
Shimer, R.4
Campbell, J.C.5
-
12
-
-
0032265918
-
A novel p-i-n photodetector fabricated on SIMOX for 1 GHz 2 V CMOS OEICs
-
T. Yoshida, Y. Ohtomo, and M. Shimaya, "A novel p-i-n photodetector fabricated on SIMOX for 1 GHz 2 V CMOS OEICs," Int. Electron Devices Meeting, 1998, pp. 29-32.
-
(1998)
Int. Electron Devices Meeting
, pp. 29-32
-
-
Yoshida, T.1
Ohtomo, Y.2
Shimaya, M.3
-
13
-
-
0036920436
-
10Gbps all silicon APD optical receiver
-
paper ThG3
-
B. Yang, J. D. Schaub, D. L. Rogers, S. M. Csutak, J. C. Campbell, "10Gbps All Silicon APD Optical Receiver," LEOS 2002, paper ThG3 (2002).
-
(2002)
LEOS 2002
-
-
Yang, B.1
Schaub, J.D.2
Rogers, D.L.3
Csutak, S.M.4
Campbell, J.C.5
-
14
-
-
3543102191
-
High speed lateral trench detectors with a junction substrate
-
June 23-25
-
C. Ouyang, J. D. Schaub, "High Speed Lateral Trench Detectors with a Junction Substrate," 61st Annual Device Research Conference, pp. 73-74, June 23-25, 2003.
-
(2003)
61st Annual Device Research Conference
, pp. 73-74
-
-
Ouyang, C.1
Schaub, J.D.2
-
15
-
-
0036920777
-
The silicon lateral trench detector in multi-Gb/s receiver systems
-
paper ThG2
-
D. L. Rogers, "The Silicon Lateral Trench Detector in Multi-Gb/s Receiver Systems," LEOS 2002, paper ThG2 (2002).
-
(2002)
LEOS 2002
-
-
Rogers, D.L.1
-
16
-
-
0035714869
-
High speed silicon lateral trench detector on SOI substrate
-
Min Yang, J. Schaub, J. D. Rogers, M. Ritter, K. Rim, J. Welser, Byeongju Park, "High speed silicon lateral trench detector on SOI substrate," 2001 IEDM Technical Digest., pp. 24.1.1-24.1.4, (2001).
-
(2001)
2001 IEDM Technical Digest.
-
-
Yang, M.1
Schaub, J.2
Rogers, J.D.3
Ritter, M.4
Rim, K.5
Welser, J.6
Park, B.7
-
17
-
-
0034823346
-
Multi Gbit/s, high sensitivity all silicon 3.3V optical receiver using PIN lateral trench photodetector
-
PD19-1
-
J. D. Schaub, D. M. Kuchta, D. L. Rogers, M. Yang, K. Rim, S. Zier and M. Sorna, "Multi Gbit/s, high sensitivity all silicon 3.3V optical receiver using PIN lateral trench photodetector," OFC 2001 Postdeadline Papers, PD19-1 (2001).
-
(2001)
OFC 2001 Postdeadline Papers
-
-
Schaub, J.D.1
Kuchta, D.M.2
Rogers, D.L.3
Yang, M.4
Rim, K.5
Zier, S.6
Sorna, M.7
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