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Volumn 18, Issue 11, 2000, Pages 1548-1553

Monolithically integrated multichannel SiGe/Si p-i-n-HBT photoreceiver arrays

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; COMMUNICATION CHANNELS (INFORMATION THEORY); CROSSTALK; HETEROJUNCTION BIPOLAR TRANSISTORS; IMPEDANCE MATCHING (ELECTRIC); MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; PHOTODIODES; SEMICONDUCTING SILICON COMPOUNDS; TIME DIVISION MULTIPLEXING;

EID: 0034314036     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.896216     Document Type: Article
Times cited : (28)

References (19)
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    • Silicon-based optoelectronics
    • Dec.
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    • Soref, R.A.1
  • 9
    • 0028526497 scopus 로고
    • Monolithically integrated silicon nMOS pin photoreceiver
    • Y. S. He, L. D. Garrett, K.-H. Lee, and J. C. Campbell, "Monolithically integrated silicon nMOS pin photoreceiver," Electron. Lett., vol. 30, pp. 1887-1888, 1994.
    • (1994) Electron. Lett. , vol.30 , pp. 1887-1888
    • He, Y.S.1    Garrett, L.D.2    Lee, K.-H.3    Campbell, J.C.4
  • 11
    • 0001726423 scopus 로고
    • Development of an integrated high speed silicon PIN photodiode sensor
    • M. Kyomasu, "Development of an integrated high speed silicon PIN photodiode sensor," IEEE Trans. Electron. Devices, vol. 42, pp. 1093-1099, 1995.
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    • Kyomasu, M.1
  • 14
  • 16
    • 0030217327 scopus 로고    scopus 로고
    • Low crosstalk (< - 40 dB) in 1.55 mm high-speed OEIC photoreceiver arrays with novel on-chip shielding
    • A. L. Gutierrez-Aitken, P. Bhattacharya, K.-C. Syao, K. Yang, G. I. Haddad, and X. Zhang, "Low crosstalk (< - 40 dB) in 1.55 mm high-speed OEIC photoreceiver arrays with novel on-chip shielding,< Electron. Lett., vol. 32, pp. 1706-1708, 1996.
    • (1996) Electron. Lett. , vol.32 , pp. 1706-1708
    • Gutierrez-Aitken, A.L.1    Bhattacharya, P.2    Syao, K.-C.3    Yang, K.4    Haddad, G.I.5    Zhang, X.6
  • 17
    • 0028549917 scopus 로고
    • 23 GHz bandwidth monolithic photoreceiver compatible with InP/InGaAs double heterojunction bipolar transistor fabrication process
    • E. Sano, M. Yoneyama, S. Yamahata, and Y. Matsuoka, "23 GHz bandwidth monolithic photoreceiver compatible with InP/InGaAs double heterojunction bipolar transistor fabrication process," Electron. Lett., vol. 30, pp. 2064-2065, 1994.
    • (1994) Electron. Lett. , vol.30 , pp. 2064-2065
    • Sano, E.1    Yoneyama, M.2    Yamahata, S.3    Matsuoka, Y.4
  • 18
    • 0029244385 scopus 로고
    • A 12-Gb/s high-performance, high-sensitivity monolithic p-i-n/HBT photoreceiver module for long-wavelength transmission systems
    • L. Lunardi, S. Chandrasekhar, C. Burrus, R. Hamm, J. Sulhoff, and J. Zyskind, "A 12-Gb/s high-performance, high-sensitivity monolithic p-i-n/HBT photoreceiver module for long-wavelength transmission systems," IEEE Photon. Technol. Lett., vol. 7, pp. 182-184, 1995.
    • (1995) IEEE Photon. Technol. Lett. , vol.7 , pp. 182-184
    • Lunardi, L.1    Chandrasekhar, S.2    Burrus, C.3    Hamm, R.4    Sulhoff, J.5    Zyskind, J.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.