Novel p-i-n photodetector fabricated on SIMOX for 1 GHz 2 V CMOS OEICs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 29-32

  Yoshida, Takeshi ^a   Ohtomo, Yusuke ^a   Shimaya, Masakazu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; INTEGRATED OPTOELECTRONICS; SILICON ON INSULATOR TECHNOLOGY;

SEPARATION BY IMPLANTED OXYGEN (SIMOX) PROCESS;

PHOTODETECTORS;

EID: 0032265918     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)