Bandwidth enhancement in silicon metal-semiconductor-metal photodetector by trench formation

IEEE Photonics Technology Letters

Volumn 8, Issue 8, 1996, Pages 1064-1066

  Ho, Jacob Y L ^a   Wong, K S ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CHARGE CARRIERS; ELECTRIC CONTACTS; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTODIODES; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS;

ABSORPTION DEPTH; BANDWIDTH ENHANCEMENT; BUFFERED OXIDE ETCH; DOPING CONCENTRATION; INTERDIGITATED TRENCHES; METAL CONTACTS; RESPONSIVITY; SILICON METAL SEMICONDUCTOR METAL PHOTODETECTORS;

PHOTODETECTORS;

EID: 0030212315     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.508739     Document Type: Article

References (8)

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