CMOS-compatible high-speed planar silicon photodiodes fabricated on SOI substrates

IEEE Journal of Quantum Electronics

Volumn 38, Issue 2, 2002, Pages 193-196

  Csutak, Sebastian M ^c   Schaub, Jeremy D ^a   Wu, Wei E ^b   Shimer, Rob ^b   Campbell, Joe C ^c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b MOTOROLA INC   (United States)

^c The University of Texas at Austin   (United States)

Author keywords

Fiber optics; Optical receivers; Photodiodes

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; FIBER OPTICS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

OPTICAL RECEIVERS; SILICON PHOTODIODES;

PHOTODIODES;

EID: 0036477687     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.980272     Document Type: Article

References (12)

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11. High speed silicon-based lateral junction photodetectors having recessed electrodes and thick oxide to reduce fringing fields
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