Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5352, Issue , 2004, Pages 299-309

  Marcinkevicius S ^a   Carmody, C ^b   Gaarder, A ^a   Tan, H H ^b   Jagadish, C ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

InGaAs; InP; Ion implantation; Semi insulating semiconductor; Time resolved photoluminescence; Transient reflectivity; Ultrafast carrier trapping

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON TRAPS; ION IMPLANTATION; OPTICAL SWITCHES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

SEMI-INSULATING SEMICONDUCTORS; ULTRAFAST CARRIER DYNAMICS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 3543076385     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.526398     Document Type: Conference Paper

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