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Volumn 5352, Issue , 2004, Pages 299-309

Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation

Author keywords

InGaAs; InP; Ion implantation; Semi insulating semiconductor; Time resolved photoluminescence; Transient reflectivity; Ultrafast carrier trapping

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON TRAPS; ION IMPLANTATION; OPTICAL SWITCHES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 3543076385     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.526398     Document Type: Conference Paper
Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.