Ion-implanted GaAs for subpicosecond optoelectronic applications

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 2, Issue 3, 1996, Pages 636-642

  Tan, Hark Hoe ^a,b,e,f   Jagadish, Chennupati ^{a,b,g,h,i,j,k,l}   Korona, Krzysztof Piotr ^c   Jasinski, Jacek ^c   Kaminska, Maria ^b,c,m,n   Viselga, Rimas ^d,o,p   Marcinkevicius, Saulius ^d,o,q   Krotkus, Arunas ^d,o,q,r  

^a IEEE

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c UNIVERSITY OF WARSAW   (Poland)

^d CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^e UNIVERSITY OF MELBOURNE   (Australia)

^f Siemens Opto Semiconductor   (Malaysia)

^g ACHARYA NAGARJUNA UNIVERSITY   (India)

^h ANDHRA UNIVERSITY   (India)

ⁱ UNIVERSITY OF DELHI   (India)

^j UNIVERSITY OF DELHI   (India)

^k QUEEN S UNIVERSITY   (Canada)

^l Queen's University ^*

^m MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

ⁿ UNIVERSITY OF CALIFORNIA   (United States)

^o VILNIUS UNIVERSITY   (Lithuania)

^p PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^q ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^r LITHUANIAN ACADEMY OF SCIENCES   (Lithuania)

more..

Author keywords

[No Author keywords available]

Indexed keywords

MOBILITY ANNEALING PROCESS;

ANNEALING; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; INSULATING MATERIALS; ION IMPLANTATION; OPTOELECTRONIC DEVICES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030229990     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.571762     Document Type: Article

References (22)

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