GaN quantum dot superlattices grown by molecular beam epitaxy at high temperature

Journal of Applied Physics

Volumn 102, Issue 7, 2007, Pages

  Xu, Tao ^a,b   Zhou, Lin ^c   Wang, Yiyi ^d   Özcan, Ahmet S ^d   Ludwig, K F ^d   Smith, David J ^c   Moustakas, T D ^a,b  

^a BOSTON UNIVERSITY   (United States)

^b Boston University   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

^d USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM DOTS; SUPERLATTICES; X RAY SCATTERING;

CORRELATION LENGTH; QUANTUM DOT SUPERLATTICES; SAPPHIRE SUBSTRATES; STRANSKI KRASTANOV GROWTH MODE;

GALLIUM NITRIDE;

EID: 35348905026     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2787155     Document Type: Article

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