Relationship between the orientation of texture and heteroepitaxy of diamond and related materials films on silicon single crystal and the valence electron structure of the interface

Science in China, Series E: Technological Sciences

Volumn 50, Issue 5, 2007, Pages 664-673

  Li, ZhiLin ^a   Li, ZhiFeng ^a   Huang, Qin ^a  

^a BEIJING UNIVERSITY OF CHEMICAL TECHNOLOGY   (China)

Author keywords

Cubic boron nitride; Diamond; Films; Heteroepitaxy; Interface electron density; Texture

Indexed keywords

CUBIC BORON NITRIDE; DIAMONDS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MICROELECTRONICS; SINGLE CRYSTALS;

ELECTRON THEORY; INTERFACE ELECTRON DENSITY; SILICON SUBSTRATES; VALENCE ELECTRON STRUCTURE;

CRYSTAL STRUCTURE;

EID: 35148897884     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-007-0071-8     Document Type: Article

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