-
1
-
-
84922644221
-
Multiplication Noise in Uniform Avalanche Photodiodes
-
R. J. McIntyre, 'Multiplication Noise in Uniform Avalanche Photodiodes,' IEEE Trans. Electron. Device., 1966, Vol. ED-13, No. 1, pp. 164-168.
-
(1966)
IEEE Trans. Electron. Device
, vol.ED-13
, Issue.1
, pp. 164-168
-
-
McIntyre, R.J.1
-
2
-
-
0019317240
-
Impact Ionization in Multilayered Heterojunction Structures
-
R. Chin, N. Holonyak, G. E. Stillman, J. Y. Tang and K. Hess, 'Impact Ionization in Multilayered Heterojunction Structures,' Electron. Lett., 1980, Vol. 16, pp. 467-469.
-
(1980)
Electron. Lett
, vol.16
, pp. 467-469
-
-
Chin, R.1
Holonyak, N.2
Stillman, G.E.3
Tang, J.Y.4
Hess, K.5
-
3
-
-
0002528786
-
Enhancement of Electron Ionization in a Superlattice: A New Avalanche Photodiode with a Large Ionization Rate Ratio
-
F. Capasson, W. T. Tsang, A. L. Hutchinson and G. F. Williams, 'Enhancement of Electron Ionization in a Superlattice: A New Avalanche Photodiode with a Large Ionization Rate Ratio,' Appl. Phys. Lett., 1982, Vol. 40, pp. 38-40.
-
(1982)
Appl. Phys. Lett
, vol.40
, pp. 38-40
-
-
Capasson, F.1
Tsang, W.T.2
Hutchinson, A.L.3
Williams, G.F.4
-
4
-
-
36549104128
-
Dependence of the GaAs/AlGaAs Superlattice Ionization Rate on Al Content
-
T. Kagawa, H. Iwamura and O. Mikami, 'Dependence of the GaAs/AlGaAs Superlattice Ionization Rate on Al Content,' Appl. Phys. Lett., 1989, Vol. 54, pp. 33-35.
-
(1989)
Appl. Phys. Lett
, vol.54
, pp. 33-35
-
-
Kagawa, T.1
Iwamura, H.2
Mikami, O.3
-
5
-
-
0041922559
-
Multiplication and Excess Noise in Multilayer Avalanche Photodiodes
-
C. K. Chia, B. K. Ng, J. P. R. David, G. J. Rees, R. C. Tozer, M. Hopkinson, R. J. Airey and P. N. Robson, 'Multiplication and Excess Noise in Multilayer Avalanche Photodiodes,' J. Appl. Phys., 2003, Vol. 94, pp. 2631-2637.
-
(2003)
J. Appl. Phys
, vol.94
, pp. 2631-2637
-
-
Chia, C.K.1
Ng, B.K.2
David, J.P.R.3
Rees, G.J.4
Tozer, R.C.5
Hopkinson, M.6
Airey, R.J.7
Robson, P.N.8
-
6
-
-
0036894098
-
Low-noise Impact Ionization Engineered Avalanche Photodiodes Grown on InP Substrates
-
S. Wang, J. B. Hurst, F. Ma, R. Sidhu, X. Sun, X. G. Zheng, A. L. Holmes, A. Huntington, L. A. Coldren and J. C. Campbell, 'Low-noise Impact Ionization Engineered Avalanche Photodiodes Grown on InP Substrates,' IEEE Photon. Technol. Lett., 2002, Vol. 14, pp. 1722-1724.
-
(2002)
IEEE Photon. Technol. Lett
, vol.14
, pp. 1722-1724
-
-
Wang, S.1
Hurst, J.B.2
Ma, F.3
Sidhu, R.4
Sun, X.5
Zheng, X.G.6
Holmes, A.L.7
Huntington, A.8
Coldren, L.A.9
Campbell, J.C.10
-
7
-
-
0037318469
-
Ultra-low Noise Avalanche Photodiodes with a 'centered-weir multiplication region
-
S. Wang, F. Ma, X. Li, R. Sidhu, X. G. Zheng, X. Sun, A. L. Holmes and J. C. Campbell, 'Ultra-low Noise Avalanche Photodiodes with a 'centered-weir multiplication region,' IEEE J. Quantum Electron., 2003, Vol. 39, No. 2, pp. 375-378.
-
(2003)
IEEE J. Quantum Electron
, vol.39
, Issue.2
, pp. 375-378
-
-
Wang, S.1
Ma, F.2
Li, X.3
Sidhu, R.4
Zheng, X.G.5
Sun, X.6
Holmes, A.L.7
Campbell, J.C.8
-
8
-
-
0141952909
-
0.4As-GaAs Avalanche Photodiodes
-
0.4As-GaAs Avalanche Photodiodes,' IEEE J. Quantum Electron., 2003, Vol. 39, No. 10, pp. 1287-1294.
-
(2003)
IEEE J. Quantum Electron
, vol.39
, Issue.10
, pp. 1287-1294
-
-
Kwon, O.H.1
Hayat, M.M.2
Wang, S.3
Campbell, J.C.4
Holmes, A.5
Pan, Y.6
Saleh, B.E.A.7
Teich, M.C.8
-
9
-
-
2942672694
-
Modeling of Avalanche Multiplication and Noise in Heterojunction Avalanche Photodiodes
-
C. Groves, J. P. R. David, G. J. Rees and D. S. Ong, 'Modeling of Avalanche Multiplication and Noise in Heterojunction Avalanche Photodiodes,' J. Appl. Phys., 2004, Vol. 95, pp. 6245-6251.
-
(2004)
J. Appl. Phys
, vol.95
, pp. 6245-6251
-
-
Groves, C.1
David, J.P.R.2
Rees, G.J.3
Ong, D.S.4
-
10
-
-
0030215941
-
Impact Ionization and Noise in SiGe Multiquantum Well Structures
-
D. C. Herbert, C. J. Williams and M. Jaros, 'Impact Ionization and Noise in SiGe Multiquantum Well Structures,' Electron. Lett., 1996, Vol. 32, pp. 1616-1618.
-
(1996)
Electron. Lett
, vol.32
, pp. 1616-1618
-
-
Herbert, D.C.1
Williams, C.J.2
Jaros, M.3
-
11
-
-
35949036921
-
Ionization Coefficients in Semiconductors: A Nonlocalized Property
-
Y. Okuto and C. R. Crowell, 'Ionization Coefficients in Semiconductors: A Nonlocalized Property,' Phys. Rev. B, 1974, Vol. 10, No. 10, pp. 4284-4296.
-
(1974)
Phys. Rev. B
, vol.10
, Issue.10
, pp. 4284-4296
-
-
Okuto, Y.1
Crowell, C.R.2
-
12
-
-
0033169533
-
A New Look at Impact Ionization - Part II: Gain and Noise in Short Avalanche Photodiodes
-
P. Yuan, K. A. Anselm, C. Hu, H. Nie, C. Lenox, A. L. Holmes, B. G. Streetman, J. C. Campbell, R. J. McIntyre, 'A New Look at Impact Ionization - Part II: Gain and Noise in Short Avalanche Photodiodes,' IEEE Trans. Electron Devices, 1999, Vol. 46, pp. 1632-1639.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 1632-1639
-
-
Yuan, P.1
Anselm, K.A.2
Hu, C.3
Nie, H.4
Lenox, C.5
Holmes, A.L.6
Streetman, B.G.7
Campbell, J.C.8
McIntyre, R.J.9
-
13
-
-
11144248797
-
-
A. H. You and D. S. Ong, 'Avalanche Multiplication and Noise Characteristics of Thin InP p -i-n Diodes', Japan. J. Appl. Phys., 2004, 43 (11A), pp. 7399-7404.
-
A. H. You and D. S. Ong, 'Avalanche Multiplication and Noise Characteristics of Thin InP p -i-n Diodes', Japan. J. Appl. Phys., 2004, Vol. 43 (11A), pp. 7399-7404.
-
-
-
|