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Volumn , Issue , 2006, Pages 324-328

Avalanche multiplication and excess noise factor of heterojunction avalanche photodiodes

Author keywords

Dead space effect; Excess noise factor; Heterojunction avalanche photodiode; Impact ionization; Multiplication gain

Indexed keywords

FEEDBACK; HETEROJUNCTIONS; IMPACT IONIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; SPURIOUS SIGNAL NOISE; STATISTICS;

EID: 35148891320     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMELEC.2006.381074     Document Type: Conference Paper
Times cited : (5)

References (13)
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  • 2
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  • 3
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    • Enhancement of Electron Ionization in a Superlattice: A New Avalanche Photodiode with a Large Ionization Rate Ratio
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    • (1982) Appl. Phys. Lett , vol.40 , pp. 38-40
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  • 4
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  • 9
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    • Modeling of Avalanche Multiplication and Noise in Heterojunction Avalanche Photodiodes
    • C. Groves, J. P. R. David, G. J. Rees and D. S. Ong, 'Modeling of Avalanche Multiplication and Noise in Heterojunction Avalanche Photodiodes,' J. Appl. Phys., 2004, Vol. 95, pp. 6245-6251.
    • (2004) J. Appl. Phys , vol.95 , pp. 6245-6251
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  • 10
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    • Impact Ionization and Noise in SiGe Multiquantum Well Structures
    • D. C. Herbert, C. J. Williams and M. Jaros, 'Impact Ionization and Noise in SiGe Multiquantum Well Structures,' Electron. Lett., 1996, Vol. 32, pp. 1616-1618.
    • (1996) Electron. Lett , vol.32 , pp. 1616-1618
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  • 11
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    • Ionization Coefficients in Semiconductors: A Nonlocalized Property
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  • 13
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    • A. H. You and D. S. Ong, 'Avalanche Multiplication and Noise Characteristics of Thin InP p -i-n Diodes', Japan. J. Appl. Phys., 2004, 43 (11A), pp. 7399-7404.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.