메뉴 건너뛰기




Volumn 4691, Issue 1, 2002, Pages 476-490

Dipole decomposition mask-design for full chip implementation at the 100 nm technology node and beyond

Author keywords

Dipole mask decomposition; Model OPC; Overlapped process windows; Pattern fidelity error; Scattering bar

Indexed keywords

COMPUTER SIMULATION; DECOMPOSITION; INTEGRATED CIRCUIT MANUFACTURE; PHASE SHIFT; PHOTORESISTS; SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 18644379512     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474596     Document Type: Article
Times cited : (39)

References (8)
  • 1
    • 85075599783 scopus 로고
    • Resolution improvement with annlar illumination
    • Keiichiro Tounai et. al., "Resolution improvement with annlar illumination" SPIE Vol. 1674, 1992, p753.
    • (1992) SPIE , vol.1674 , pp. 753
    • Tounai, K.1
  • 2
    • 85075609310 scopus 로고
    • New imaging technique for 64M-DRAM
    • Nanomasa Shiraishi et. al., "New imaging technique for 64M-DRAM" SPIE Vol. 1674, 1992, p741.
    • (1992) SPIE , vol.1674 , pp. 741
    • Shiraishi, N.1
  • 3
    • 0033684901 scopus 로고    scopus 로고
    • Patterning 220 nm pitch DRAM Patterns by using double mask exposure
    • Dongseok Nam et. al., "Patterning 220nm pitch DRAM Patterns by using double mask exposure" SPIE Vol. 4000, 2000, p283.
    • (2000) SPIE , vol.4000 , pp. 283
    • Nam, D.1
  • 4
    • 0035759056 scopus 로고    scopus 로고
    • Feasibility Study of printing sub 100 nm with ArF lithography
    • Seok-Kyum Kim et. al., "Feasibility Study of printing sub 100nm with ArF lithography", SPIE 4346, 2001, p214.
    • (2001) SPIE , vol.4346 , pp. 214
    • Kim, S.-K.1
  • 5
    • 0035758420 scopus 로고    scopus 로고
    • Can DUV take us below 100 nm
    • Jo Finders et. al Can DUV take us below 100nm SPIE 4346, 2001, p153.
    • (2001) SPIE , vol.4346 , pp. 153
    • Finders, J.1
  • 7
    • 0000728551 scopus 로고    scopus 로고
    • Optical proximity correction for intermediate-pitch features using sub-resolution scattering bars
    • Nov
    • J.F. Chen, T. Laidig, K. Wampler, and R. Caldwell, "Optical proximity correction for intermediate-pitch features using sub-resolution scattering bars," J. Vac. Sci. Technol. B, vol. 15, pp 2426-2433, Nov. 1997.
    • (1997) J. Vac. Sci. Technol. B , vol.15 , pp. 2426-2433
    • Chen, J.F.1    Laidig, T.2    Wampler, K.3    Caldwell, R.4
  • 8
    • 17944372929 scopus 로고    scopus 로고
    • Lithography Process Optimization for 130 nm Poly Gate Mask And The Impact of Mask Error Factor
    • S. Hsu, et al, "Lithography Process Optimization for 130nm Poly Gate Mask And The Impact of Mask Error Factor", SPIE Vol. 4344, 2001, p783.
    • (2001) SPIE , vol.4344 , pp. 783
    • Hsu, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.