Lithography manufacturing implementation for 65nm and 45nm nodes with model-based scattering bars using IML™ technology

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5754, Issue PART 1, 2005, Pages 355-367

  Hsu, Michael ^a   Van Broeke, Doug Den ^a   Laidig, Tom ^a   Wampler, Kurt E ^a   Hollerbach, Uwe ^a   Socha, Robert ^a   Fung Chen, J ^a   Hsu, Stephen ^a   Shi, Xuelong ^a  

^a ASML US Inc   (United States)

Author keywords

CPL; Diffraction Optical Element; DOE; IML Technology; LithoCruiser ; MaskWeaver ; Model based SB; SB; Scattering Bars; SLiC

Indexed keywords

BENCHMARKING; DIFFRACTION; IMAGE PROCESSING; INTEGRATED CIRCUITS; LIGHTING; MATHEMATICAL MODELS; OPTIMIZATION;

CPL; DIFFRACTION OPTICAL ELEMENTS; DOE; IML TECHNOLOGY; LITHOCRUISER™; MASKWEAVER™; MODEL-BASED SB; SCATTERING BARS;

PHOTOLITHOGRAPHY;

EID: 25144466441     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.598589     Document Type: Conference Paper

References (4)

1. Doug van den Broeke et. al., "Near 0.3 k1 full pitch contact hole patterning using chromeless phase lithography (CPL)", SPIE Vol. 5256, pp 297-308, 2003
2. Doug van den Broeke et. al., "Application of CPL with interference Mapping Lithography to gGenerate Random Contact Reticle Designs for the 65nm Node", SPIE Vol. 5446, pp 550-559, 2004
3. Robert Socha et. al., "Contact Hole Reticle Optimization by Using Interference Mapping Lithography (IML)", SPIE Vol. 5446, pp 516-534, 2004
4. Vincent Wiaux et. al., "Through pitch low k1 contact hole imaging with CPL technology", SPIE Vol. 5446, pp 585-594, 2004