Characterization of copper germanide as contact metal for advanced MOSFETs

IEEE Electron Device Letters

Volumn 27, Issue 7, 2006, Pages 549-551

  Chao, Y L ^a   Xu, Y ^a   Scholz, R ^b   Woo, J C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Contact resistivity; Germanide; Germanium

Indexed keywords

COPPER COMPOUNDS; DEPOSITION; ELECTRIC PROPERTIES; GERMANIUM COMPOUNDS; INTERFACES (MATERIALS); RAPID THERMAL ANNEALING; TRANSMISSION ELECTRON MICROSCOPY;

CONTACT RESISTIVITY; KIRKENDALL EFFECT; NANOVOIDS;

MOSFET DEVICES;

EID: 33745675965     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.877301     Document Type: Article

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