Correlating scatterometry to CD-SEM and electrical gate measurements at the 90 nm node using TMU analysis

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 1, 2004, Pages 550-563

  Sendelbach, Matthew ^a   Archie, Chas ^a   Banke, Bill ^a   Mayer, Jason ^a   Nii, Hideaki ^b   Herrera, Pedro ^c   Hankinson, Matt ^c  

^a IBM MICROELECTRONICS   (United States)

^b Toshiba America Inc   (United States)

^c KLA TENCOR CORPORATION   (United States)

Author keywords

CD SEM; Correlation; Electrical; Gate; Lpoly; Reference Measurement System; RMS; Scatterometry; TMU; Total Measurement Uncertainty

Indexed keywords

ELECTRICAL GATE MEASUREMENTS; REFERENCE MEASUREMENT SYSTEMS (RMS); TOTAL MEASUREMENT UNCERTAINITY (TMU);

ATOMIC FORCE MICROSCOPY; CORRELATION METHODS; DATA REDUCTION; ELECTRICAL ENGINEERING; MATHEMATICAL MODELS; SCANNING ELECTRON MICROSCOPY; SCATTERING;

SEMICONDUCTOR MATERIALS;

EID: 4344644221     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.538009     Document Type: Conference Paper

References (5)

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3. E. Solecky, J. Mayer, and C. Archie, "Improving sub-150nm lithography and etch CD-SEM correlations to AFM and electrical test", Proceedings of SPIE, Vol. 4689, pp 473-483, 2002.
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