Deep RIE process for silicon carbide power electronics and MEMS

Materials Research Society Symposium - Proceedings

Volumn 622, Issue , 2000, Pages

  Beheim, G ^a   Salupo, C S ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; INDUCTIVELY COUPLED PLASMA; MASKS; MICROELECTROMECHANICAL DEVICES; POWER ELECTRONICS; SILICON CARBIDE; SURFACE CLEANING;

DEEP REACTIVE ION ETCHING;

REACTIVE ION ETCHING;

EID: 0034429068     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-622-t8.9.1     Document Type: Conference Paper

References (5)

1. Demonstration of deep (80 μm) RIE etching of SiC for MEMS and MMIC Applications
2. Dry etching of materials other than silicon