In situ current-voltage characterization of swift heavy ion irradiated Au/n-GaAs schottky diode at low temperature

Radiation Effects and Defects in Solids

Volumn 157, Issue 4, 2002, Pages 367-374

  Singh, R ^a   Arora, S K ^a   Singh, J P ^a   Kanjilal, D ^a  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

Metal semiconductor interface; Nuclear and electronic energy loss; Schottky barrier height; Swift heavy ion irradiation; Thermionic field emission

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ENERGY DISSIPATION; HEAVY IONS; ION BEAMS; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES;

METAL-SEMICONDUCTOR INTERFACE; NUCLEAR AND ELECTRONIC ENERGY LOSS; SCHOTTKY BARRIER HEIGHT; SWIFT HEAVY ION IRRADIATION; THERMIONIC FIELD EMISSION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 28344434960     PISSN: 10420150     EISSN: 10294953     Source Type: Journal    
DOI: 10.1080/10420150214035     Document Type: Article

References (21)

1. Ejimanya, J.I., (1986). Solid State Electron., 29, 841.
2. Thurzo, I., Hrubcin, L., Bartos, J. and Pincik, E., (1993). Nucl. Instrum. Methods, B83 145.
3. Arulkumaran, S., Arokiaraj, J., Dharamrasu, N. and Kumar, J., (1996). Nucl. Instrum. Methods, B119, 519.
4. Dharamrasu, N., Arulkumaran, S., Sumathi, R.R., Jayavel, P., Kumar, J., Magudapathy, P. and Nair, K.G.M., (1998). Nucl. Instrum. Methods, B140, 119.
5. Auret, F.D., Goodman, S.A., Erasmus, R., Meyer, W.E. and Myburg, G., (1996). Nucl. Instrum. Methods, B119, 51.
6. Carlone, C., Parenteau, M. and Khanna, S.M., (1998). J. Appl. Phys., 83, 5164.
7. Lambsdorff, M., Klingenstein, M., Kuhl, J., Moglestue, C. and Rosenzweig, J., (1991). Appl. Phys. Lett., 58, 1410.
8. Lambsdorff, M., Kuhl, J., Rosenzweig, J., Axmann, A. and Schneider, J., (1991). Appl. Phys. Lett., 58, 1881.
9. Mikou, M., Carin, R., Bogdanski, P. and Madelon, R., (1996). Nucl. Instrum. Methods, B107, 246.
10. Kanjilal, D., Chopra, S., Narayanan, M.M., Iyer, I.S., Jha, V., Joshi, R. and Datta, S.K., (1993). Nucl. Instrum. Methods, A238, 97.
11. Rhoderiok, E.H. and Williams, R.H., Metal Semiconductor Contacts, (Oxford, New York, 1988), 2nd ed., p. 109.
12. Padovani F.A., and Stratton, R., (1966). Solid State Electron. 9, 695.
13. Crowell, C.R. and Rideout, V., (1969). Solid State Electron., 12, 189.
14. Hubers, H.W. and Roser, H.P., (1998). J. Appl. Phys., 84, 5326.
15. Langer, L.F., Young, R.W. and Sugerman, A., (1983). IEEE Electron Device Lett., EDL-4, 320.
16. Horvath, Zs J., (1996). Solid State Electron., 39, 176.
17. Yu, L.S., Liu, Q.Z., Xing, Q.J., Qiao, D.J., Lau, S.S. and Redwing, J., (1998). J. Appl. Phys., 84, 2099.
18. Ziegler, J.F., Biersack, J.P. and Littmark, U., The Stopping and Ranges of Ions in Matter, (Pergamon, New York, 1985).
19. Levalois, M., Bogdanski, P. and Toulemonde, M., (1992). Nucl. Instrum. Methods, B63, 14.
20. Sze, S.M., Physics of Semiconductor Devices, (John Wiley & Sons, New York, 1981), 2nd ed., p. 275.
21. Bachmann, T., Wendler, E., Wesch, W., Wilson, O. R.J., Jeynes, C., Gwilliam, R.M. and Sealy, B.J., (1995). Nucl. Instrum. Methods, B99, 619.