Effective method for evaluation of semiconductor laser quality

Microelectronics Reliability

Volumn 40, Issue 2, 2000, Pages 333-337

  Li, Hongyan ^a   Qi, Liyun ^a   Shi, Jiawei ^a   Jin, Enshun ^a   Li, Zhengting ^a   Gao, Dingsan ^a   Yu, Jinzhong ^b   Guo, Liang ^b  

^a JILIN UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MICROPROCESSOR CHIPS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; THERMAL EFFECTS;

PLANAR BURIED CRESCENT (PBC) STRUCTURES;

SEMICONDUCTOR LASERS;

EID: 0033906836     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00205-x     Document Type: Article

References (5)

1. Joyce WB, Dixon RW. Fundamental and harmonic response voltages of a sinusoidally current-modulated ideal semiconductor laser. J Appl Phys 1976;47:3510-3.
2. Choy MM, Barnes CE. Effective screen for fast aging InGaAsP BH lasers using electrical derivatives. Electron Lett 1985;21(19):846-7.
3. Jiawei Shi, et al. The junction voltage saturation and reliability of semiconductor laser. Optical and Quantum Electronics 1992;24(7):775-81.
4. Jiawei Shi, et al. b and its temperature dependence are the important criteria of the reliability of semiconductor lasers. Microelectron Reliab 1994;34(7):1405-8.
5. Jiawei Shi, et al. The characteristic junction parameter of a semiconductor laser and its relation with reliability. Optical and Quantum Electronics 1996;28(6):647-51.