The characteristic junction parameter of a semiconductor laser and its relation with reliability

Optical and Quantum Electronics

Volumn 28, Issue 6, 1996, Pages 647-651

  Jiawei, Shi ^a   Enshun, Jin ^a   Hongyan, Li ^a   Jing, Ma ^a   Liyun, Qi ^a   Dingsan, Gao ^a  

^a JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; LIGHT SOURCES; RELIABILITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

CHARACTERISTIC JUNCTION PARAMETER; DRIVE CURRENT; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 0030169310     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf00411299     Document Type: Article

References (6)

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3. N. K. DUTTA, P. D. WITT and R. J. NELSON, IEEE J. Lightwave Technol. LT-2 (1984) 201.
4. SHI JIAWEI and JIN ENSHUN, Acta Scientiarum Naturalium Universitatis JiLinensis, no. 2 (1985) 60.
5. YU LISHENG, J. Laser 7(7) (1980) 9.
6. W. B. JOYCE and R. W. DIXON, J. Appl. Phys. 49(7) (1978) 3719.