메뉴 건너뛰기




Volumn 40, Issue 12, 2000, Pages 2123-2128

The peaks in the electric derivative curves and optic derivative curves of GaAs/GaAlAs high-power QW lasers

Author keywords

[No Author keywords available]

Indexed keywords

HIGH POWER LASERS; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 8744307876     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(00)00032-9     Document Type: Article
Times cited : (6)

References (11)
  • 1
    • 0343326780 scopus 로고
    • The junction voltage saturation and reliability of semiconductor lasers
    • Jiawei S, Enshun J, Dingsan G. The junction voltage saturation and reliability of semiconductor lasers. Opt Quantum Electron 1992;24:775-81.
    • (1992) Opt Quantum Electron , vol.24 , pp. 775-781
    • Jiawei, S.1    Enshun, J.2    Dingsan, G.3
  • 2
    • 0028464283 scopus 로고
    • An improved approach and experimental results of a low frequency noise measurement technique used for reliability estimation of diode lasers
    • Jiawei S, Enshun J, Jing M, Dingson G. An improved approach and experimental results of a low frequency noise measurement technique used for reliability estimation of diode lasers. Microelectron Reliab 1994;34:1261-4.
    • (1994) Microelectron Reliab , vol.34 , pp. 1261-1264
    • Jiawei, S.1    Enshun, J.2    Jing, M.3    Dingson, G.4
  • 3
    • 0030169310 scopus 로고    scopus 로고
    • The characteristic junction parameter of a semiconductor laser and its relation with reliability
    • Jiawei S, Enshun J, Hongyan L, Jing M, Lijun G, Dingson G. The characteristic junction parameter of a semiconductor laser and its relation with reliability. Opt Quantum Electron 1996;28:647-51.
    • (1996) Opt Quantum Electron , vol.28 , pp. 647-651
    • Jiawei, S.1    Enshun, J.2    Hongyan, L.3    Jing, M.4    Lijun, G.5    Dingson, G.6
  • 4
    • 0033140709 scopus 로고    scopus 로고
    • An application of the electrical derivative measurement in rapid screening of high-power semiconductor lasers
    • Hongyan L, Jiawei S, Liyun Q, Zhenglin L, Dingson G. An application of the electrical derivative measurement in rapid screening of high-power semiconductor lasers. Chin J Laser 1999;A26:507-10.
    • (1999) Chin J Laser , vol.A26 , pp. 507-510
    • Hongyan, L.1    Jiawei, S.2    Liyun, Q.3    Zhenglin, L.4    Dingson, G.5
  • 6
    • 0022128708 scopus 로고
    • Effective screen for fast aging InGaAsP BH lasers using electrical derivatives
    • Choy MM, Barnes CE. Effective screen for fast aging InGaAsP BH lasers using electrical derivatives. Electron Lett 1985;21:846-7.
    • (1985) Electron Lett , vol.21 , pp. 846-847
    • Choy, M.M.1    Barnes, C.E.2
  • 7
    • 0001454602 scopus 로고
    • Improved light-output linearity in stripe-geometry double heterostructrue (Al,Ga)As lasers
    • Dixon RW, Nash FR, Hartman RL, Hepplewhite RI. Improved light-output linearity in stripe-geometry double heterostructrue (Al,Ga)As lasers. Appl Phys Lett 1976; 29:372-4.
    • (1976) Appl Phys Lett , vol.29 , pp. 372-374
    • Dixon, R.W.1    Nash, F.R.2    Hartman, R.L.3    Hepplewhite, R.I.4
  • 8
    • 0018258979 scopus 로고
    • Multimode field theory explanation of kinks in the characteristics of DH lasers
    • Buus J. Multimode field theory explanation of kinks in the characteristics of DH lasers. Electron Lett 1978;14:127-8.
    • (1978) Electron Lett , vol.14 , pp. 127-128
    • Buus, J.1
  • 9
    • 0018004633 scopus 로고
    • Lateral transverse mode instability and its stabilization in stripe geometry injection lasers
    • Lang R. Lateral transverse mode instability and its stabilization in stripe geometry injection lasers. IEEE J Quantum Electron 1979;QE-15:718-26.
    • (1979) IEEE J Quantum Electron , vol.QE-15 , pp. 718-726
    • Lang, R.1
  • 10
    • 0019315580 scopus 로고
    • Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP DH lasers
    • Thompson GHB, Henshall GD. Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP DH lasers. Electron Lett 1980;16:42-3.
    • (1980) Electron Lett , vol.16 , pp. 42-43
    • Thompson, G.H.B.1    Henshall, G.D.2
  • 11
    • 0020114045 scopus 로고
    • Reliability of InGaAsP light emitting diodes at high current density
    • Zipfel CL, Chin AK, Digiuseppe M. Reliability of InGaAsP light emitting diodes at high current density. IEEE Trans Electron Dev 1983;ED-30:310-5.
    • (1983) IEEE Trans Electron Dev , vol.ED-30 , pp. 310-315
    • Zipfel, C.L.1    Chin, A.K.2    Digiuseppe, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.