Anomalous differential resistance change at the oscillation threshold in quantum-well laser diodes

IEEE Journal of Quantum Electronics

Volumn 41, Issue 1, 2005, Pages 9-14

  Eliseev, Peter G ^a   Adamiec, Pawel ^b,c   Bercha, Artem ^b,d   Dybała, Filip ^b,c   Bohdan, Roland ^b   Trzeciakowski, Witold A ^b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^d UZHGOROD NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Differential resistance; Pressure and temperature effects; Semiconductor lasers

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; HYDROSTATIC PRESSURE; PRESSURE EFFECTS; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL EFFECTS;

DIFFERENTIAL RESISTANCE; INJECTION-INDUCED CONDUCTIVITY; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 12844268651     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.839237     Document Type: Article

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